“By creating a package environment that reduces chip-to-package junction temperatures, GaN chip efficiency and reliability can be improved. The success of the package’s performance is dependent on the base material used, the quality of the package construction, and the attachment process,” explained Casey Krawiec, vice president of global sales at StratEdge. “Almost 20 years ago, StratEdge began developing package designs and assembly processes
specifically for GaN chips that maximize thermal dissipation.”
“Packages and Eutectic Die Attach for High-power GaN Devices,” by Casey Krawiec, details how StratEdge’s post-fired ceramic package with a copper-molybdenum-copper (CMC) base, and its proprietary eutectic die attach method, results in a near void-free attachment that reportedly reduces junction temperatures by 20 degrees Celsius as compared to standard assembly methods using ceramic packages of alternate construction.
, founded in 1992, designs, manufactures, and provides assembly services for a complete line of high-frequency and high-power semiconductor packages operating from DC to 63+ GHz. StratEdge offers post-fired ceramic, low-cost molded ceramic, and ceramic QFN packages, and specializes in packages for extremely demanding gallium arsenide (GaAs) and gallium nitride (GaN) devices. Markets served include telecom for 5G, VSAT, broadband wireless, satellite, military, test and measurement, automotive, clean energy, and down-hole. All packages are lead-free and most meet RoHS and WEEE standards. StratEdge is ITAR registered and an ISO 9001:2015 certified facility located in Santee, California, near San Diego.